Optical Sensing Solutions

Silicon Photodiodes

Silicon Photodiodes

 

General Purpose

Most widely used Silicon photodiodes are sensitive from 400 to 1100nm. They are available in a variety of active area sizes, from 0.5mm dia. to 28mm dia. Offered in a variety of packaging types, hermetic TO can, BNC, and plastic housing.

 

 

High Speed Silicon Photodiodes

 

These detectors are small active area detectors optimized at 800nm band and features fast rise time for high bandwidth applications (up to 450 MHz). Available in flat window or micro-lens window TO18 can.

 

 

UV Enhanced Photodiodes

 

Generally sensitive between 200 to 1100nm these detectors are typically packaged with quartz or UV transmissive glass window. They exhibit low dark current and can be reverse biased for lower capacitance and faster rise time performance.

X-Ray and Radiation Detectors

 

A unique class of Silicon Photodiode designed for additional sensitivity in the X-Ray region without use of scintillator crystals or screen. Sensitivity ranges from 200nm to 0.07nm (6eV to 17.6keV) or 17.6 keV and above. Generally is available with removable window and are vacuum compatible.

Photodiode Arrays

 

Linear or 2 Dimensional array with active areas offered in different sizes and pitch to suit variety of applications. Offered in LCC, DIP chip carriers, PCB, ceramic, or monolithic solderable bare chip.

 

Two Color Sandwich Detectors

 

Detector of choice for remote temperature measurement that works on the principle that ratio of radiation intensities from two adjacent wavelength can be compared to standard black body radiation curve to deduce temperature of the object.

Nd-YAG Optimized Photodiodes

 

Optimized for high sensitivity at 1060nm, low capacitance, low noise, and high speed operation. Need to be operated at high reverse bias voltage (200 Volt). View Products & Descriptions

Avalanche Photodiodes

 

Avalanche detectors utilize internal multiplication through impact ionization to achieve very high sensitivity (>40A/W peak at Gain=100). This 800nm band APD is optimized for low noise and high bandwidth applications up to 900 MHz.

Photodiode Amplifier Hybrids

 

These detectors are integrated with pre-amplifier inside the same package. It produces voltage output proportional to incident light intensity. A variety of gains and bandwidths are determined by external feedback components of customers’ choosing.

Photodiode Filter Assembly

 

Optical filter offers a low cost and effective solution to tailor spectral response of a Silicon photodiode. Photometric and Radiometric detectors are more often designed through the use of integrated optical filter.

 

Solderable Chip Photodiodes

 

A low cost approach to applications requiring large active area photodetectors or where the detector is considered ‘disposable’. Available with soldered leads or as a stand-alone bare die. Sensitivity range from 400nm to 1100nm.

Position Sensing Detectors

 

Segmented and Lateral Effect PSD available in 1-Dimensional or 2-Dimensional Active Area.   Available in a variety of active area sizes and packaging to suit wide-ranging applications. Segmented Detector is typically used in beam nulling application while Lateral Effect PSDs are most suited to measure wide lateral displacement.

Plastic Encapsulated Detectors

 

OSI Optoelectronics offers a line of high quality and reliable plastic encapsulated photodiodes. They are available in a variety of shapes and sizes of photodetectors and packages, including industry standard T1 and T13/4, BPW34, flat and lensed side lookers, as well as surface mount family.

Dual Emitter series

 

Dual Emitter Series consists of a Red (660nm) LED and a companion Near-Infrared LED such as 880, 895, 905, or 940nm LED. A matching photodetectors’ response is optimized for maximum sensitivity at 660nm as well as companion NIR wavelengths. They are widely used as Pulse Oximetry components.

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InGaAs Photodiodes

High Speed InGaAs

 

FCI-InGaAs-XXX series offers low capacitance, low dark current and high responsivity from 1100nm to 1620nm make these devices ideal for high-bit rate receivers used in LAN, MAN, WAN, and other high speed communication systems.

Large Active Area Photodiodes

 

FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics’ large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals.

Segmented InGaAs Photodiode

 

FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas.

Photodiode Array

 

FCI-InGaAs-XXM series with 4, 8, 12 and 16 channels are parts of OSI Optoelectronics’s high speed IR sensitive photodetector arrays.

Photodiode Amplifier Hybrids

 

FCI-XXX-InGaAs-70 series are compact and integrated high speed InGaAs photodetector with wide dynamic range transimpedance amplifier.

Back Illuminated InGaAs Photodiodes

 

FCI-InGaAs-300B1XX series are a low noise multifunctional backside illuminated photodiode/arrays.

Photodiode Ceramic Assembly

 

These are part of our line of monitor photodiodes mounted on metallized ceramic blocks.

10 Gbps InGaAs Photodiode

 

FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable photosensitive device, exhibiting low dark current and excellent performance stability.

Photodiode Pigtail Assembly

 

The FCI-InGaAs-XX-XX-XX with active area of 70um and 120um are part of OSI Optoelectronics’s family of high speed IR sensitive detectors in a fiber pigtail package.

 

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GaAs Photodiodes

Photodiode Arrays

 

The FCI-GaAs-XXm is a 4 or 12 element GaAs PIN photodetector array designed for high speed fiber receiver and monitoring applications. View Products & Descriptions

Photodiode Amplifier Hybrid

 

FCI-H125/250G-GaAs-100 series with active area sizes of 100µm is a compact integration of our high speed GaAs photodetector with a wide dynamic range transimpedance amplifier.

 

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